Spin injection in a semiconductor through a space-charge layer
نویسندگان
چکیده
http://dx.doi.org/10.1016/j.sse.2014.06.035 0038-1101/ 2014 Elsevier Ltd. All rights reserved. ⇑ Corresponding author. Tel.: +43 15880136060. E-mail addresses: [email protected] (J. Ghosh), [email protected]. at (T. Windbacher), [email protected] (V. Sverdlov), [email protected]. ac.at (S. Selberherr). Joydeep Ghosh ⇑, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr
منابع مشابه
Spin Injection in Silicon: The Role of Screening Effects
Spin injection in silicon and other semiconductors by purely electrical means is paramount for building spintronic devices. One of the methods is to inject spins from a ferromagnetic electrode. Recently, a robust spin injection from a ferromagnetic metal contact into a semiconductor has been performed at room temperature [1]. However, the magnitude of the spin accumulation signal obtained with ...
متن کاملSpin injection and accumulation in inhomogeneous semiconductors
We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping concentrations. We use a theoretical and numerical method, presented in this paper, based on a self-consistent treatment of a two-component version of the ...
متن کاملTheory of spin-polarized bipolar transport in magnetic p-n junctions
The interplay between spin and charge transport in electrically and magnetically inhomogeneous semiconductor systems is investigated theoretically. In particular, the theory of spin-polarized bipolar transport in magnetic p-n junctions is formulated, generalizing the classic Shockley model. The theory assumes that in the depletion layer the nonequilibrium chemical potentials of spin-up and spin...
متن کاملSpin Diffusion in Silicon from a Ferromagnetic Contact
Spin current generation in silicon and other semiconductors by purely electrical means is paramount for building spintronic devices. Recently, a robust spin injection into a semiconductor from a ferromagnetic metal contact has been performed at room temperature [1], but the spin accumulation signal obtained with the three-terminal measurement setup is reported to be higher than the theoretical ...
متن کاملSpin injection and diffusion in silicon based devices from a space charge layer
We have performed simulations on electron spin transport in an n-doped silicon bar with spin-dependent conductivity with or without the presence of an external electric field. We further consider three cases like charge neutrality, charge accumulation, and charge depletion at one boundary and found substantial differences in the spin transport behavior. The criteria determining the maximum spin...
متن کامل